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Prime Wafer Cleaning Process
See the following for processing details of prime wafer cleaning. The actual process, however, will depend on the needs of various manufacturers:
| Item | Process | Description |
|---|---|---|
| 1 | Crystal Growth | Crystal growth systems are used to facilitate crystal pulling. Dislocation-free monocrystalline silicon ingots are grown as a result |
| 2 | Cropping | Cropping saw is used for removing the crown, tail, and redundant portions of monocrystalline silicon ingots. The ingots are also sliced into manageable length |
| 3 | Grinding | Grinder is used to grind and polish the diameter of already-sliced monocrystalline silicon ingots into a desirable size |
| 4 | Flat or Notch Grinding | Grinder is used to grind the outside diameter of the ingot into a flat surface, or a notch, to determine the crystal orientation of the wafer |
| 5 | Slicing | Wire saw is used to slice and modify rods into wafers |
| 6 | Edge Grinding | Grinder is used to grind and round off jagged edge of the freshly-sliced wafer into a desirable, smooth and round shape |
| 7 | Wafer Lapping | Lapper is used to remove scraps, saw marks, or surface nicks caused by the grinding wheel |
| 8 | Wafer Etching | The damaged layer caused by front end machine processing on wafer surface is removed through wet etching. |
| 9 | Rapid Thermal Annealing(RTA) | Rapid thermal annealing can effectively remove thermal donar. |
| 10 | Backside Damage(BSD) | Backside damage strengthens wafer with extrinsic gettering capabilities |
| 11 | Wafer Polish | Wafer polish, as its name implies, refines and polishes wafer surface until it is flat, smooth, and damage-free |
| 12 | Wafer Cleaning | Wet cleaning is used to remove particles, organic and inorganic impurities on wafer surface |
| 13 | Laser Mark | Laser beams are used on the backside of wafer to imprint a serial number, facilitating history-tracking of the wafer |
| 14 | Packaging | Wafers are vacuum-packed in a wafer cassette to ensure their integrity during storage and transport |
GPTC offers eight types of process equipment for the cleaning of raw material and wafer, and high-performance etching, see the following:
| Process | Tank Configuration | |||||||
|---|---|---|---|---|---|---|---|---|
| Post Lapping Etch | DIW Over Flow | HF & HNO3 | QDR | SC1 | QDR | DHF | DIW Over Flow | Dryer |
| Post Lapping Clean | HCl | DIW Over Flow | NH4OH | DIW Over Flow | NH4OH | DIW Over Flow | Dryer | |
| Post SBD Clean | DIW Over Flow | DHF | DIW Over Flow | Dryer | ||||
| Pre-Poly Clean | DIW Over Flow | SPM | Hot QDR | SC1 | Hot QDR | DIW Over Flow | Dryer | |
| Pre-LTO Clean | DIW Over Flow | SPM | Hot QDR | SC1 | Hot QDR | DIW Over Flow | Dryer | |
| Pre-Polish Clean | SC1 | QDR | DIW Over Flow | Dryer | ||||
| Post-Polish Clean | DIW Over Flow | SPM | Hot QDR | DHF | DIW Over Flow | SC1 | QDR | Dryer |
| Final Clean | DIW Over Flow | SC1 | QDR | DHF | DIW Over Flow | Dryer | ||